G-Doping-Based Metal-Semiconductor Junction

Atomic-scale Modeling of Transition-metal Doping of Semiconductor Nanocrystals

Effect of molecular binding to a semiconductor on metal/molecule/semiconductor junction behavior.

Diodes made by (indirectly) evaporating Au on a monolayer of molecules that are adsorbed chemically onto GaAs, via either disulfide or dicarboxylate groups, show roughly linear but opposite dependence of their effective barrier height on the dipole moment of the molecules. We explain this by Au-molecule (electrical) interactions not only with the exposed end groups of the molecule but also with...

Metal-optic and Plasmonic Semiconductor-based Nanolasers

Metal-optic and Plasmonic Semiconductor-based Nanolasers

Metal-semiconductor-metal ultraviolet photodetector based on GaN

A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with λ = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 nA under 5 V bias, and i...

High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors

photodetectors Ayman Karar, Narottam Das, Chee Leong Tan, Kamal Alameh, Yong Tak Lee, and Fouad Karouta Electron Science Research Institute, Edith Cowan University, Joondalup, WA, Australia School of Photonics Science, Gwangju Institute of Science and Technology (GIST), Gwangju, South Korea Department of Information and Communications, GIST, Gwangju, South Korea Department of Nanobio Materials ...